Datasheets for TI1

Datasheets found :: 87 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
31	DAC1136	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
32	DAC1136J	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
33	DAC1136K	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
34	DAC1136L	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
35	DAC1138	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
36	DAC1138	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
37	DAC1138J	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
38	DAC1138K	HighR esoluti1o6n- a nd1 8-Bit Digital-to-AnaClongv efters	Analog Devices
39	EPM7064AETI100-7	Programmable logic , 64 macrocells, 4 logic array blocks, 68 I/O pins, 7ns	Altera Corporation
40	EPM7064STI100-7	Programmable logic , 64 macrocells, 4 logic array blocks, 68 I/O pins, 7ns	Altera Corporation
41	EPM7128AETI100-7	Programmable logic , 128 macrocells, 8 logic array blocks, 84 I/O pins, 7ns	Altera Corporation
42	EPM7128AETI144-7	Programmable logic , 128 macrocells, 8 logic array blocks, 100 I/O pins, 7ns	Altera Corporation
43	EPM7128STI100-10	Programmable logic , 128 macrocells, 8 logic array blocks, 84 I/O pins, 10ns	Altera Corporation
44	EPM7160STI100-10	Programmable logic , 160 macrocells, 10 logic array blocks, 84 I/O pins, 10ns	Altera Corporation
45	EPM7256AETI100-7	Programmable logic , 256 macrocells, 16 logic array blocks, 84 I/O pins, 7ns	Altera Corporation
46	EPM7256AETI144-7	Programmable logic , 256 macrocells, 16 logic array blocks, 120 I/O pins, 7ns	Altera Corporation
47	K4S281632C-TI1H	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
48	K4S281632C-TI1L	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
49	K6R1008C1A-TI12	128K x 8 high speed static RAM, 5V operating, 12ns	Samsung Electronic
50	K6R1008C1A-TI15	128K x 8 high speed static RAM, 5V operating, 15ns	Samsung Electronic
51	K6R1008C1C-TI10	128K x 8 high speed static RAM, 5V operating, 10ns	Samsung Electronic
52	K6R1008C1C-TI12	128K x 8 high speed static RAM, 5V operating, 12ns	Samsung Electronic
53	K6R1008C1C-TI15	128K x 8 high speed static RAM, 5V operating, 15ns	Samsung Electronic
54	K6R1008C1D-TI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).	Samsung Electronic
55	K6R1008V1D-TI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).	Samsung Electronic
56	K6R1016C1D-TI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).	Samsung Electronic
57	K6R1016V1D-TI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).	Samsung Electronic
58	K6R4008C1D-TI10	256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.	Samsung Electronic
59	K6R4008V1D-TI10	256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.	Samsung Electronic
60	K6R4016C1D-TI10	256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.	Samsung Electronic

Datasheets found :: 87 Page: | 1 | 2 | 3 |