No. |
Part Name |
Description |
Manufacturer |
31 |
HYB3165165ATL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
32 |
HYB3165165ATL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
33 |
HYB3165165BTL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
34 |
HYB3165165BTL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
35 |
HYB3165165TL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
36 |
HYB3165400ATL-60 |
16M x 4bit DRAM |
Siemens |
37 |
HYB3165405ATL-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
38 |
HYB3165405BTL-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
39 |
HYB3165405TL-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
40 |
HYB3165800ATL-60 |
8M x 8bit DRAM |
Siemens |
41 |
HYB3165805ATL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
42 |
HYB3165805ATL-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
43 |
HYB3165805BTL-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
44 |
HYB3165805TL-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
45 |
HYB3166160ATL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
46 |
HYB3166165ATL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
47 |
HYB3166165BTL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
48 |
HYB39S256160DTL-6 |
256 MBit Synchronous DRAM |
Infineon |
49 |
HYB39S256160DTL-6 |
256-MBit Synchronous DRAM |
Infineon |
50 |
HYB39S256400DTL-6 |
256-MBit Synchronous DRAM |
Infineon |
51 |
HYB39S256800DTL-6 |
256-MBit Synchronous DRAM |
Infineon |
52 |
HYB39S256800DTL-6 |
256 MBit Synchronous DRAM |
Infineon |
53 |
HYB514400BTL-60 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
54 |
KM416C1000BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
55 |
KM416C1000CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
56 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
57 |
KM416C1200BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
58 |
KM416C1200CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
59 |
KM416C1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
60 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
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