No. |
Part Name |
Description |
Manufacturer |
31 |
BFY65 |
Silicon NPN Planar Transistor with high blocking voltage, especially for controlling number display tubes |
TELEFUNKEN |
32 |
BSP50 |
Darlington Transistors - NPN Silicon Darlington Transistor with high collector current |
Infineon |
33 |
BSP51 |
Darlington Transistors - NPN Silicon Darlington Transistor with high collector current |
Infineon |
34 |
BSP52 |
Darlington Transistors - NPN Silicon Darlington Transistor with high collector current |
Infineon |
35 |
BSP60 |
Darlington Transistors - PNP Silicon Darlington Transistor with high collector current |
Infineon |
36 |
BSP61 |
Darlington Transistors - PNP Silicon Darlington Transistor with high collector current |
Infineon |
37 |
BSP62 |
Darlington Transistors - PNP Silicon Darlington Transistor with high collector current |
Infineon |
38 |
BSS79B |
Switching Transistors - NPN Silicon Switching Transistor with high current gain |
Infineon |
39 |
BSS79C |
Switching Transistors - NPN Silicon Switching Transistor with high current gain |
Infineon |
40 |
BSS80B |
Switching Transistors - PNP Silicon Switching Transistor with high current gain |
Infineon |
41 |
BSS80C |
Switching Transistors - PNP Silicon Switching Transistor with high current gain |
Infineon |
42 |
BSS81B |
Switching Transistors - NPN Silicon Switching Transistor with high current gain |
Infineon |
43 |
BSS81C |
Switching Transistors - NPN Silicon Switching Transistor with high current gain |
Infineon |
44 |
BSS82B |
Switching Transistors - PNP Silicon Switching Transistor with high current gain |
Infineon |
45 |
BSS82C |
Switching Transistors - PNP Silicon Switching Transistor with high current gain |
Infineon |
46 |
BSV51 |
Silicon NPN epitaxial planar transistor with high reverse collector base voltage, especially for indicator tube driver stages and for relaise driver stages |
AEG-TELEFUNKEN |
47 |
BSW88 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
48 |
BSW89 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
49 |
BSX38 |
Silicon NPN epitaxial planar switching transistor with high current gain |
AEG-TELEFUNKEN |
50 |
BSX81 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
51 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
52 |
BSY92 |
Silicon NPN planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
53 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
54 |
BU126 |
NPN Silicon Power Transistor with a high reverse voltage |
Siemens |
55 |
BU208 |
NPN Silicon Power Transistor with 1500V reverse voltage |
Siemens |
56 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
57 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
58 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
59 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
60 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
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