No. |
Part Name |
Description |
Manufacturer |
31 |
AN1423 |
INTRODUCING THE PSD9XX FAMILY |
SGS Thomson Microelectronics |
32 |
AN487 |
INTRODUCTION TO A 10A MONOLITHIC SWITCHING REGULATOR IN MULTIPOWER-BCD TECHNOLOGY |
SGS Thomson Microelectronics |
33 |
AN521 |
AN INTRODUCTION TO IGBTS |
SGS Thomson Microelectronics |
34 |
AN525 |
AN INTRODUCTION TO INTELLIGENT POWER |
SGS Thomson Microelectronics |
35 |
AN900 |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY |
SGS Thomson Microelectronics |
36 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
37 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
38 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
39 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
40 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
41 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
42 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
43 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
44 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
45 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
46 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
47 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
48 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
49 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
50 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
51 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
52 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
53 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
54 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
55 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
56 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
57 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
58 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
59 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
60 |
BF964 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
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