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Datasheets for TROD

Datasheets found :: 503
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 AN1423 INTRODUCING THE PSD9XX FAMILY SGS Thomson Microelectronics
32 AN487 INTRODUCTION TO A 10A MONOLITHIC SWITCHING REGULATOR IN MULTIPOWER-BCD TECHNOLOGY SGS Thomson Microelectronics
33 AN521 AN INTRODUCTION TO IGBTS SGS Thomson Microelectronics
34 AN525 AN INTRODUCTION TO INTELLIGENT POWER SGS Thomson Microelectronics
35 AN900 MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY SGS Thomson Microelectronics
36 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
37 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
38 BF1005SW Silicon N-Channel MOSFET Tetrode Infineon
39 BF1005W Silicon N-Channel MOSFET Tetrode Infineon
40 BF1009 Silicon N-Channel MOSFET Tetrode for ... Infineon
41 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
42 BF1009S Silicon N-Channel MOSFET Tetrode for ... Infineon
43 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
44 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
45 BF1012S Silicon N-Channel MOSFET Tetrode Infineon
46 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
47 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
48 BF2000 Silicon N Channel MOSFET Tetrode Siemens
49 BF2000W Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
50 BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
51 BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
52 BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
53 BF2040W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
54 BF960 N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE Vishay
55 BF961 Dual gate, discharge mode, MOS field controlled tetrode Mikroelektronikai Vallalat
56 BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode TEMIC
57 BF961 N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode Vishay
58 BF961A N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Vishay
59 BF961B N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Vishay
60 BF964 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode Vishay


Datasheets found :: 503
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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