| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 32 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 33 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 34 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
| 35 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 36 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 37 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 38 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 39 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 40 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 41 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 42 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 43 |
BPY78 |
Silicon planar photothyristor tetrode (SCS) |
AEG-TELEFUNKEN |
| 44 |
CCD30-11 |
Open Electrode High Performance CCD Sensor |
etc |
| 45 |
CF300 |
N- Channel-GaAs-MESFET-Tetrode Depletion Mode |
etc |
| 46 |
CRA04S |
4 or 8 Terminal Package, Wraparound Termination, Inner Electrode Protection, Flow Solderable, Automatic Placement Capability |
Vishay |
| 47 |
CRA06E |
4 or 8 Terminal Package with 2 or 4 Isolated Resistors, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability |
Vishay |
| 48 |
CRA06P |
Thick Film Resistor Array, 8 terminal package with 4 isolated resistors, Automatic placement capability, Flow solderable, Inner electrode protection, Thick film resistance element |
Vishay |
| 49 |
CRA06S |
4 or 8 Terminal Package with 2 or 4 Isolated Resistors, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability |
Vishay |
| 50 |
CRA12E AND S |
4, 8, 10, or 16 Terminal Package, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Choice of Isolated or Bussed Circuits |
Vishay |
| 51 |
CRCC1206 |
Choice of Dielectric Characteristics (X7R or Y5U), Wraparound Termination, Thick Film R/C Element, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Standard Size |
Vishay |
| 52 |
KF907 |
TETRODE MOS FOR VHF |
Tesla Elektronicke |
| 53 |
KF910 |
TETRODE MOS FOR VHF |
Tesla Elektronicke |
| 54 |
KF964 |
TETRODE MOS FOR VHF |
Tesla Elektronicke |
| 55 |
KF966 |
TETRODE MOS FOR VHF |
Tesla Elektronicke |
| 56 |
KF982 |
TETRODE MOS FOR VHF |
Tesla Elektronicke |
| 57 |
L1939 |
300 ��m emission spot, no electrode in emission area |
Hamamatsu Corporation |
| 58 |
L1939-04 |
300 ��m emission spot, no electrode in emission area |
Hamamatsu Corporation |
| 59 |
L2D2 |
The best light source is supported by the best electrode technology |
Hamamatsu Corporation |
| 60 |
L6301 |
The best light source is supported by the best electrode technology |
Hamamatsu Corporation |
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