| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BCR196F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 32 |
BCR198F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 33 |
BCR199F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 34 |
BFP 640F |
SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 |
Infineon |
| 35 |
BFP405F |
RF-Bipolar - NPN Silicon RF transistor for low current applications in NEW thin small flatlead package TSFP-4 |
Infineon |
| 36 |
BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 37 |
BFP520F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 38 |
BFP540F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4 |
Infineon |
| 39 |
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4 |
Infineon |
| 40 |
BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package |
Infineon |
| 41 |
BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package |
Infineon |
| 42 |
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 43 |
BFR360F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators and VCO Modules up to 4 GHz |
Infineon |
| 44 |
BFR360T |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators up to 4GHz |
Infineon |
| 45 |
BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 46 |
BFR949F |
RF-Bipolar - NPN Silicon RF transistor for low, high gain broadband amplifiers in TSFP-3 package |
Infineon |
| 47 |
HLX6228TSF |
128K x 8 STATIC RAM?Low Power SOI |
Honeywell Sensing |
| 48 |
HTSFCH4801EV |
HITAG S transponder IC |
NXP Semiconductors |
| 49 |
HTSFCH5601EV |
HITAG S transponder IC |
NXP Semiconductors |
| 50 |
MAX6715UTSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 51 |
MAX6716UTSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 52 |
MAX6719UTSFD1+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 53 |
MAX6719UTSFD1+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 54 |
MAX6719UTSFD2+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 55 |
MAX6719UTSFD2+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 56 |
MAX6719UTSFD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 57 |
MAX6719UTSFD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 58 |
MAX6719UTSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 59 |
MAX6720UTSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 60 |
MAX6721UTSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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