| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BTW69400 |
SCR |
ST Microelectronics |
| 32 |
BTW69600 |
SCR |
ST Microelectronics |
| 33 |
BTW69800 |
SCR |
ST Microelectronics |
| 34 |
BTW69N-1000 |
SCR, 55A, 1000V |
SGS Thomson Microelectronics |
| 35 |
BTW69N-1200 |
SCR, 55A, 1200V |
SGS Thomson Microelectronics |
| 36 |
BTW69N-600 |
SCR, 55A, 600V |
SGS Thomson Microelectronics |
| 37 |
BTW69N-800 |
SCR, 55A, 800V |
SGS Thomson Microelectronics |
| 38 |
BTW69N1000 |
SCR |
ST Microelectronics |
| 39 |
BTW69N1200 |
SCR |
ST Microelectronics |
| 40 |
KTW61 |
VARIABLE - MU SCREENED TETRODE |
OSRAM |
| 41 |
M6MGD13TW66CWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 42 |
M6MGD13TW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 43 |
MTW6N100 |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 44 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 45 |
MTW6N100E |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 46 |
MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 47 |
MTW6N60E |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
Motorola |
| 48 |
STW60N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 49 |
STW60N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 50 |
STW60N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 51 |
STW60NE10 |
N - CHANNEL 100V - 0.016Ohm - 60A TO-247 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 52 |
STW60NE10 |
N-CHANNEL 100V - 0.016 OHM - 60A TO-247 STRIPFET POWER MOSFET |
ST Microelectronics |
| 53 |
STW60NM50N |
N-channel 500 V, 0.035 Ohm typ., 68 A, MDmesh(TM) II Power MOSFET in TO-247 package |
ST Microelectronics |
| 54 |
STW62N65M5 |
Automotive-grade N-channel 650 V, 0.041 Ohm typ., 46 A MDmesh M5 Power MOSFET in a TO-247 package |
ST Microelectronics |
| 55 |
STW62NM60N |
N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package |
ST Microelectronics |
| 56 |
STW69N65M5 |
N-channel 650 V, 0.037 Ohm, 58 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 57 |
STW69N65M5-4 |
N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh(TM) V Power MOSFET in TO247-4 package |
ST Microelectronics |
| 58 |
STW6N120K3 |
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247 package |
ST Microelectronics |
| 59 |
STW6N95K5 |
N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
| 60 |
STW6NA80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| | | |
