No. |
Part Name |
Description |
Manufacturer |
31 |
1048EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
32 |
1L20 |
High Linearity Position Sensing Detector |
Laser Components |
33 |
1L20 |
High Linearity Position Sensing Detector |
Laser Components |
34 |
1L20 |
-High Linearity Position Sensing Detector |
Laser Components |
35 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
36 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
37 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
38 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
39 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
40 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
41 |
20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
Motorola |
42 |
2C2904A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
43 |
2C2907A |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
44 |
2C3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
45 |
2C4261 |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
46 |
2C4957 |
Chip Type 2C4957 Geometry 0006 Polarity PNP |
Semicoa Semiconductor |
47 |
2C6193 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
48 |
2N2042 |
PNP germanium transistor suitable for high-voltage and high-reliability projects |
Motorola |
49 |
2N2043 |
PNP germanium transistor suitable for high-voltage and high-reliability projects |
Motorola |
50 |
2N2904 |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
51 |
2N2904A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
52 |
2N2904AUB |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
53 |
2N2905 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
54 |
2N2905A |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
55 |
2N2905AL |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
56 |
2N2906 |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
57 |
2N2906A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
58 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
59 |
2N2907 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
60 |
2N2907A |
Type 2N2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
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