| No. |
Part Name |
Description |
Manufacturer |
| 31 |
309U80P3 |
Standard recovery diode |
International Rectifier |
| 32 |
309U80P4 |
Standard recovery diode |
International Rectifier |
| 33 |
309U80P5 |
Standard recovery diode |
International Rectifier |
| 34 |
400U80D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 35 |
400U80D |
800V 400A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 36 |
400U80DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 37 |
70U80 |
800V 250A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 38 |
AN1184 |
BU808DFI IN THE HORIZONTAL DEFLECTION STAGE |
SGS Thomson Microelectronics |
| 39 |
APU8051 |
8-BIT MICRO CONTROLLER WITH 4/8KB ROM EMVEDDED |
Aplus Integrated Circuits |
| 40 |
APU8052 |
8-BIT MICRO CONTROLLER WITH 4/8KB ROM EMVEDDED |
Aplus Integrated Circuits |
| 41 |
BGU8004 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 42 |
BGU8006 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 43 |
BGU8007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 44 |
BGU8009 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 45 |
BGU8010 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 46 |
BGU8011 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 47 |
BGU8051 |
Low noise high linearity amplifier |
NXP Semiconductors |
| 48 |
BGU8052 |
Low noise high linearity amplifier |
NXP Semiconductors |
| 49 |
BGU8053 |
Low noise high linearity amplifier |
NXP Semiconductors |
| 50 |
BU800 |
5A NPN silicon power transistor 1500V 60W with integrated damper diode |
Motorola |
| 51 |
BU801 |
High Voltage Fast Darlington |
ST Microelectronics |
| 52 |
BU806 |
FAST SWITCHING DARLINGTON TRANSISTOR |
Boca Semiconductor Corporation |
| 53 |
BU806 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 54 |
BU806 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 55 |
BU806 |
High voltage silicon darlington NPN transistor - plastic case |
IPRS Baneasa |
| 56 |
BU806 |
Silicon NPN Planar Epitaxial Darlington Transistor |
IPRS Baneasa |
| 57 |
BU806 |
POWER TRANSISTORS(8.0A,150-200V,60W) |
MOSPEC Semiconductor |
| 58 |
BU806 |
8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS |
Motorola |
| 59 |
BU806 |
DARLINGTON NPN POWER TRANSISTORS |
ON Semiconductor |
| 60 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
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