No. |
Part Name |
Description |
Manufacturer |
31 |
15116S |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
32 |
15116SI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
33 |
15116X |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
34 |
15116XI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
35 |
15S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
36 |
17S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
37 |
18S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
38 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
39 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
40 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
41 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
42 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
43 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
44 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
45 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
46 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
47 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
48 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
49 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
50 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
51 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
52 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
53 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
54 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
55 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
56 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
57 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
58 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
59 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
60 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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