No. |
Part Name |
Description |
Manufacturer |
31 |
15116X |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
32 |
15116XI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
33 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
34 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
35 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
36 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
37 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
38 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
39 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
40 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
41 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
42 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
43 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
44 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
45 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
46 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
47 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
48 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
49 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
50 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
51 |
2SA1598 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
52 |
2SA1599 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
53 |
2SA1600 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
54 |
2SA1601 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
55 |
2SA1679 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
56 |
2SA1795 |
Low-Saturation Voltage Switching Transistors / LSV Series (Surface Mount) |
Shindengen |
57 |
2SA1795 |
Low-saturation high-speed voltage switching bipolar transistor |
Shindengen |
58 |
2SA1796 |
Low-Saturation Voltage Switching Transistors / LSV Series (Surface Mount) |
Shindengen |
59 |
2SA1796 |
Low-saturation high-speed voltage switching bipolar transistor |
Shindengen |
60 |
2SA1876 |
Low-Saturation Voltage Switching Transistors / HSV Series (Surface Mount) |
Shindengen |
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