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Datasheets for USI

Datasheets found :: 5347
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No. Part Name Description Manufacturer
31 1N4004 Silicon diffusion diode for low power general applications AEG-TELEFUNKEN
32 1N4004 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
33 1N4004G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
34 1N4005 Silicon diffusion diode for low power general applications AEG-TELEFUNKEN
35 1N4005 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
36 1N4005G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
37 1N4006 Silicon diffusion diode for low power general applications AEG-TELEFUNKEN
38 1N4006 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
39 1N4006G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
40 1N4007 Silicon diffusion diode for low power general applications AEG-TELEFUNKEN
41 1N4007 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
42 1N4007G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
43 1N459 Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white Texas Instruments
44 1SS97 Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note NEC
45 1SS97 Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note NEC
46 1SS98 Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note NEC
47 1SS99 Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note NEC
48 1SS99 Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note NEC
49 22SC5405 Silicon NPN triple diffusion planar type Panasonic
50 2N4957 Application Note - UHF amplifier design using data sheet design curves Motorola
51 2N5016 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
52 2N5470 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
53 2N5919 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
54 2N5942 Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors Motorola
55 2N6105 60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note RCA Solid State
56 2N6266 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
57 2N6267 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
58 2SA1871 High-speed high-voltage switching PNP 3-diffusion trans NEC
59 2SB1645 Silicon PNP triple diffusion planar type Darlington(For power amplification) Panasonic
60 2SB1653 Silicon PNP triple diffusion planar type(For power switching) Panasonic


Datasheets found :: 5347
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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