No. |
Part Name |
Description |
Manufacturer |
31 |
HYS64V8200GU-10 |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
Siemens |
32 |
HYS64V8200GU-8 |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
Siemens |
33 |
HYS64V8200GU-8B |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
Siemens |
34 |
HYS72V8200GU-10 |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
Siemens |
35 |
HYS72V8200GU-8 |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
Siemens |
36 |
IC41LV82002 |
DYNAMIC RAM, EDO DRAM |
ICSI |
37 |
IC41LV82002S |
DYNAMIC RAM, EDO DRAM |
ICSI |
38 |
IS41LV8200-50J |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
39 |
IS41LV8200-50JI |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
40 |
IS41LV8200-60J |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
41 |
IS41LV8200-60JI |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
42 |
TC55V8200FT-10 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
43 |
TC55V8200FT-12 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
44 |
TC55V8200FT-15 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
45 |
TC55V8200FTI-12 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
46 |
TC55V8200FTI-15 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
47 |
TPV8200B |
RF POWER TRANSISTOR NPN SILICON |
Motorola |
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