No. |
Part Name |
Description |
Manufacturer |
31 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
32 |
2SC3474 |
Transistor Silicon NPN Epitaxial Type Switching Applications Solenoid Drive Applications |
TOSHIBA |
33 |
2SC3474 |
Transistor Silicon NPN Epitaxial Type Switching Applications Solenoid Drive Applications |
TOSHIBA |
34 |
2SC3582-T |
For amplify microwave and low noise. |
NEC |
35 |
2SC3583-L |
For amplify microwave and low noise. |
NEC |
36 |
2SC3583-T1B |
For amplify microwave and low noise. |
NEC |
37 |
2SC3583-T2B |
For amplify microwave and low noise. |
NEC |
38 |
2SC3585-L |
For amplify microwave and low noise. |
NEC |
39 |
2SC3585-T1B |
For amplify microwave and low noise. |
NEC |
40 |
2SC3585-T2B |
For amplify microwave and low noise. |
NEC |
41 |
2SC3673 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS |
TOSHIBA |
42 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
43 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
44 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
45 |
2SC3964 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE |
TOSHIBA |
46 |
2SC4094-T1 |
For amplify microwave and low noise. |
NEC |
47 |
2SC4094-T2 |
For amplify microwave and low noise. |
NEC |
48 |
2SC4094R-T1 |
For amplify microwave and low noise. |
NEC |
49 |
2SC4094R-T2 |
For amplify microwave and low noise. |
NEC |
50 |
2SC4095-T1 |
For amplify microwave and low noise. |
NEC |
51 |
2SC4095-T2 |
For amplify microwave and low noise. |
NEC |
52 |
2SC4095R |
For amplify microwave and low noise. |
NEC |
53 |
2SC4095R-T1 |
For amplify microwave and low noise. |
NEC |
54 |
2SC4095R-T2 |
For amplify microwave and low noise. |
NEC |
55 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
56 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
57 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
58 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
59 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
60 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
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