| No. |
Part Name |
Description |
Manufacturer |
| 31 |
APP NOTE |
Application Note - a 50KHz 200W Half-Bridge Switching Power Supply Using Ring Emitter Transistors |
Fujitsu Microelectronics |
| 32 |
AS200-313 |
PHEMT GaAs IC 2 W High Linearity 5-6 GHz T/R Switch |
Skyworks Solutions |
| 33 |
AS200-313 |
As200-313:PHEMT GAAS ic 2 W High Linearity 5 6 |
Skyworks Solutions Inc |
| 34 |
AS200-313LF |
PHEMT GaAs IC 2 W High Linearity 5-6 GHz T/R Switch |
Skyworks Solutions |
| 35 |
AS225-313 |
PHEMT GaAs IC 1 W High Linearity 0.1-6 GHz SPDT Switch |
Skyworks Solutions |
| 36 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 37 |
BD313 |
10A complementary silicon 150W high-power NPN transistor 80V 150W |
Motorola |
| 38 |
BD314 |
10A complementary silicon 150W high-power PNP transistor 80V 150W |
Motorola |
| 39 |
BF370R |
0.500W High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.100A Ic, 40 hFE. |
Continental Device India Limited |
| 40 |
BF393 |
0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE. |
Continental Device India Limited |
| 41 |
BF420 |
0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 42 |
BF421 |
0.800W High Voltage PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 43 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 44 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 45 |
BF423 |
0.800W High Voltage PNP Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 46 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 47 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 48 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 49 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 50 |
BGA6130 |
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier |
NXP Semiconductors |
| 51 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
| 52 |
BGA7027 |
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier |
NXP Semiconductors |
| 53 |
BGA7124 |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier |
NXP Semiconductors |
| 54 |
BGA7127 |
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier |
NXP Semiconductors |
| 55 |
BGA7130 |
400 MHz to 2700 MHz 1 W high linearity silicon amplifier |
NXP Semiconductors |
| 56 |
BTDA2030 |
βTDA2030 14W Hi-Fi audio power amplifier |
IPRS Baneasa |
| 57 |
BZX55C82 |
500MW HERMETICALLY SEALED GLASS ZENER VOLTAGE REGULATORS |
New Jersey Semiconductor |
| 58 |
BZX55C91 |
500MW HERMETICALLY SEALED GLASS ZENER VOLTAGE REGULATORS |
New Jersey Semiconductor |
| 59 |
BZX55C91V |
500MW HERMETICALLY SEALED GLASS ZENER VOLTAGE REGULATORS |
New Jersey Semiconductor |
| 60 |
CP756 |
0.750W High Voltage PNP Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 40 hFE. |
Continental Device India Limited |
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