| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1.5KE100 |
81.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 32 |
1.5KE100 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 33 |
1.5KE100A |
85.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 34 |
1.5KE100A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 95.0V(min), 105V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 35 |
1.5KE110 |
89.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 36 |
1.5KE110 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 99.0V(min), 121V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 37 |
1.5KE110A |
94.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 38 |
1.5KE110A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 105V(min), 116V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 39 |
1.5KE120 |
97.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 40 |
1.5KE120 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 108V(min), 132V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 41 |
1.5KE120A |
102.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 42 |
1.5KE120A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 114V(min), 126V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 43 |
1.5KE130 |
105.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 44 |
1.5KE130 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 117V(min), 143V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 45 |
1.5KE130A |
111.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 46 |
1.5KE130A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 124V(min), 137V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 47 |
1.5KE150 |
121.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 48 |
1.5KE150 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 135V(min), 165V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 49 |
1.5KE150A |
128.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 50 |
1.5KE150A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 143V(min), 158V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 51 |
1.5KE160 |
130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 52 |
1.5KE160 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 144V(min), 176V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 53 |
1.5KE160A |
136.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 54 |
1.5KE160A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 152V(min), 168V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 55 |
1.5KE170 |
138.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 56 |
1.5KE170 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 153V(min), 187V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 57 |
1.5KE170A |
145.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 58 |
1.5KE170A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 162V(min), 179V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 59 |
1.5KE180 |
146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 60 |
1.5KE180 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 162V(min), 198V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
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