| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6654/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 32 |
2N6654/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 33 |
2N6654/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 34 |
2N6654/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 35 |
2N6654A |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 36 |
2N6654B |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 37 |
2N6655/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 38 |
2N6655/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 39 |
2N6655/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 40 |
2N6655/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 41 |
2SD1087 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
| 42 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 43 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 44 |
2SD1409 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
| 45 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
| 46 |
2SD1460 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
| 47 |
2SD684 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
| 48 |
2SD798 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
| 49 |
5962-85155052A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
| 50 |
5962-8515505RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
| 51 |
5962-8515505SA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 |
Texas Instruments |
| 52 |
5962-85155062A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
| 53 |
5962-8515506RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
| 54 |
5962-8515506SA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 |
Texas Instruments |
| 55 |
5962-85155072A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
| 56 |
5962-8515507RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
| 57 |
5962-85155082A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
| 58 |
5962-8515508RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
| 59 |
5962-8515508SA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 |
Texas Instruments |
| 60 |
5962-9080702Q2A |
Excalibur JFET-Input Low Power High Drive Single Operational Amplifier |
Texas Instruments |
| | | |
