No. |
Part Name |
Description |
Manufacturer |
31 |
2N6654/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
32 |
2N6654/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
33 |
2N6654/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
34 |
2N6654/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
35 |
2N6654A |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
36 |
2N6654B |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
37 |
2N6655/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
38 |
2N6655/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
39 |
2N6655/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
40 |
2N6655/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
41 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
42 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
43 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
44 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
45 |
2SD1087 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
46 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
47 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
48 |
2SD1409 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
49 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
50 |
2SD1460 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
51 |
2SD684 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
52 |
2SD798 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
53 |
5962-85155052A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
54 |
5962-8515505RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
55 |
5962-8515505SA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 |
Texas Instruments |
56 |
5962-85155062A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
57 |
5962-8515506RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
58 |
5962-8515506SA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 |
Texas Instruments |
59 |
5962-85155072A |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
60 |
5962-8515507RA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CDIP -55 to 125 |
Texas Instruments |
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