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Datasheets for X6737

Datasheets found :: 65
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
31 MAX6737XKTGD3-TG05 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
32 MAX6737XKTID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
33 MAX6737XKTWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
34 MAX6737XKTZD3 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
35 MAX6737XKTZD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
36 MAX6737XKTZD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
37 MAX6737XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
38 MAX6737XKTZD3-TG05 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
39 MAX6737XKVDD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
40 MAX6737XKVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
41 MAX6737XKVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
42 MAX6737XKVHD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
43 MAX6737XKVHD3-T Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
44 MAX6737XKVRD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
45 MAX6737XKVRD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
46 MAX6737XKVRD3-T Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
47 MAX6737XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
48 MAX6737XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
49 MAX6737XKWID3-T Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
50 MAX6737XKWTD3-T Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
51 MAX6737XKYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
52 MAX6737XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
53 MAX6737XKYHD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
54 MAX6737XKYHD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
55 MAX6737XKYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
56 MAX6737XKYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
57 MAX6737XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
58 MAX6737XKZGD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
59 MAX6737XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
60 MAX6737XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 65
Page: | 1 | 2 | 3 |



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