No. |
Part Name |
Description |
Manufacturer |
31 |
BXY23EA3 |
Junction varactor |
Siemens |
32 |
BXY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
33 |
BXY24EA |
Varactors for use in up converters |
Siemens |
34 |
BXY24EA |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
35 |
BXY24EA |
Silicon charge storage varactors for frequency multiplication |
Siemens |
36 |
BXY24EA |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
37 |
BXY27 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band and input powers up to 10W |
Mullard |
38 |
BXY27 |
Step recovery diode |
Philips |
39 |
BXY27 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to S-band |
VALVO |
40 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
41 |
BXY28 |
Step recovery diode |
Philips |
42 |
BXY28 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to C-band |
VALVO |
43 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
44 |
BXY29 |
Step recovery diode |
Philips |
45 |
BXY29 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to the X-band |
VALVO |
46 |
COP8FGXY28M8 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory/ Two Comparators and USART |
National Semiconductor |
47 |
COP8FGXY28N8 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory/ Two Comparators and USART |
National Semiconductor |
48 |
COP8SGXY28M8 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART |
National Semiconductor |
49 |
COP8SGXY28N8 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART |
National Semiconductor |
50 |
COP8SGXY28N8 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART |
National Semiconductor |
51 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
52 |
CXY21 |
Gunn Effect Device |
Philips |
53 |
CXY21A |
Gunn Effect Device |
Philips |
54 |
CXY22A |
Gallium Arsenide Limiter Diode |
Philips |
55 |
CXY22B |
Gallium Arsenide Limiter Diode |
Philips |
56 |
CXY23 |
Gallium Arsenide Tuning Diode |
Philips |
57 |
CXY24A |
GUNN Effect Device |
Philips |
58 |
CXY24B |
GUNN Effect Device |
Philips |
59 |
CXY26 |
Gallium Arsenide Hyper-Abrupt Varactor Diode |
Philips |
60 |
HLMP-CW18-XY200 |
T-1 3/4 Precision Optical Performance White LED |
Agilent (Hewlett-Packard) |
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