No. |
Part Name |
Description |
Manufacturer |
31 |
BUF16820 |
14-Channel GAMMA VOLTAGE GENERATOR with Programmable Vcom Outputs and OTP Memory 32-HTSSOP -40 to 85 |
Texas Instruments |
32 |
BUF16820AIDAPR |
14-Channel GAMMA VOLTAGE GENERATOR with Programmable Vcom Outputs and OTP Memory 32-HTSSOP -40 to 85 |
Texas Instruments |
33 |
CC2640F128RHBR |
SimpleLink ultra-low power wireless MCU for Bluetooth low energy 32-VQFN -40 to 85 |
Texas Instruments |
34 |
CC2640F128RHBT |
SimpleLink ultra-low power wireless MCU for Bluetooth low energy 32-VQFN -40 to 85 |
Texas Instruments |
35 |
CC2640F128RSMR |
SimpleLink ultra-low power wireless MCU for Bluetooth low energy 32-VQFN -40 to 85 |
Texas Instruments |
36 |
CC2640F128RSMT |
SimpleLink ultra-low power wireless MCU for Bluetooth low energy 32-VQFN -40 to 85 |
Texas Instruments |
37 |
CXK77V3211Q |
32768-word by 32-bit High Speed Synchronous Static RAM |
SONY |
38 |
CXK77V3211Q-12 |
32768-word by 32-bit High Speed Synchronous Static |
SONY |
39 |
CXK77V3211Q-14 |
32768-word by 32-bit High Speed Synchronous Static |
SONY |
40 |
CY7C1062AV33-8BGI |
The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. |
Cypress |
41 |
DA28F320J5-120 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
42 |
DA28F640J5-150 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
43 |
E28F320J5-120 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
44 |
G28F320J5-120 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
45 |
G28F640J5-150 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
46 |
GMS34004TK |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version |
Hynix Semiconductor |
47 |
GMS34004TM |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version |
Hynix Semiconductor |
48 |
GMS34004TW |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version |
Hynix Semiconductor |
49 |
GMS34112TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
50 |
GMS34112TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
51 |
GMS34112TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
52 |
GMS34140TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
53 |
GMS34140TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
54 |
GMS34140TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
55 |
K5A3240YBC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
56 |
K5A3240YBC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
57 |
K5A3240YT |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
58 |
K5A3240YTC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
59 |
K5A3240YTC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
60 |
K5A3340YBC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
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