| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AQY277AZ |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 32 |
ASY27 |
Germanium PNP switching transistor. Complementary to ASY29 |
AEG-TELEFUNKEN |
| 33 |
ASY27 |
H.F. ALLOY PNP Transistor |
COSEM |
| 34 |
ASY27 |
Switching transistor |
mble |
| 35 |
ASY27 |
Switching transistor |
mble |
| 36 |
ASY27 |
Germanium P-N-P low power transistor |
Mullard |
| 37 |
ASY27 |
Germanium Transistor |
Mullard |
| 38 |
ASY27 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 39 |
ASY27 |
PNP Transistor |
Siemens |
| 40 |
ASY27 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 41 |
ASY27 |
Germanium PNP switching transistor |
VALVO |
| 42 |
ASY29 |
Germanium NPN switching transistor. Complementary to ASY27 |
AEG-TELEFUNKEN |
| 43 |
BBY24-BBY27 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 44 |
BBY27 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 45 |
BBY27 |
Junction varactor |
Siemens |
| 46 |
BBY27 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 47 |
BBY27 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 48 |
BBY27-S2 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 49 |
BDY27 |
Bipolar NPN Device |
SemeLAB |
| 50 |
BDY27 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 51 |
BFY27 |
Silicon NPN Planar HF and switching Transistor |
TELEFUNKEN |
| 52 |
BGY27 |
IMPATT Diode |
Siemens |
| 53 |
BGY27DA-1D |
IMPATT Diode |
Siemens |
| 54 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 55 |
BGY27DB-1E |
IMPATT Diode |
Siemens |
| 56 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 57 |
BGY27E-1F |
IMPATT Diode |
Siemens |
| 58 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 59 |
BSY27 |
Silicon Transistor |
Mullard |
| 60 |
BSY27 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| | | |
