No. |
Part Name |
Description |
Manufacturer |
31 |
SD602 |
Si-npn power transistor, possibly equivalent KY602 |
RFT |
32 |
SF_BDY60 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
33 |
SMY60 |
Si-MOS Field Effect Double transistor P-Channel |
RFT |
34 |
SMY60 |
Transistor |
RFT |
35 |
STY60NA20 |
N - CHANNEL 200V - 0.030W - 60 A - Max247 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
36 |
STY60NA20 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR |
ST Microelectronics |
37 |
STY60NK30Z |
N-CHANNEL 300V 0.033 OHM 60A MAX247 ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
38 |
STY60NM50 |
N-CHANNEL 500V 0.045 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
39 |
STY60NM50 |
N-CHANNEL 500V - 0.045 OHM - 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
40 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
41 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
42 |
SY604 |
125 MHz Trigger PROGRAMMABLE TIMING EDGE VERNIER |
Micrel Semiconductor |
43 |
SY605 |
125 MHz WRITE PROGRAMMABLE TIMING EDGE VERNIER |
Micrel Semiconductor |
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