| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DS1040Z-75+ |
Programmable One-Shot Pulse Generator |
MAXIM - Dallas Semiconductor |
| 32 |
DS1040Z-75_T_R |
Programmable One-Shot Pulse Generator |
Dallas Semiconductor |
| 33 |
DS1100LZ-75 |
3.3V 5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 34 |
DS1100LZ-75 |
3.3V 5-Tap Economy Timing Element Delay Line |
MAXIM - Dallas Semiconductor |
| 35 |
DS1100LZ-75+ |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 36 |
DS1100LZ-75+T |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 37 |
DS1100LZ-75+W |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 38 |
DS1100Z-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 39 |
DS1100Z-75 |
5-Tap Economy Timing Element Delay Line |
MAXIM - Dallas Semiconductor |
| 40 |
DS1100Z-75+ |
5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 41 |
DS1100Z-75+T&R |
5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 42 |
HM514260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 43 |
HM514260AZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 44 |
HM514400ALTZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 45 |
HM514400ALZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 46 |
HM514400ASLZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 47 |
HM514400ATZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 48 |
HM514400AZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 49 |
HM514400BLZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 50 |
HM514400BZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 51 |
HM514400CLZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 52 |
HM514400CZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 53 |
HM514800ALZ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 54 |
HM514800AZ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 55 |
HM51S4260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 56 |
HM51S4260AZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 57 |
MMBT3904FZ-7B |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 58 |
MMBT3906FZ-7B |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 59 |
MT4C4001JCZ-7_883C |
1 meg x 4 DRAM fast page mode DRAM |
Austin Semiconductor |
| 60 |
MT4C4001JCZ-7_IT |
1 meg x 4 DRAM fast page mode DRAM |
Austin Semiconductor |
| | | |
