| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
JANTX1N4148UB2 |
Rectifier diode, 100V |
Microsemi |
| 3122 |
JANTX1N4148UB2R |
Rectifier diode, 100V |
Microsemi |
| 3123 |
JANTX1N4148UBCA |
Rectifier diode, 100V |
Microsemi |
| 3124 |
JANTX1N4148UBCC |
Rectifier diode, 100V |
Microsemi |
| 3125 |
JANTX1N4148UBD |
Rectifier diode, 100V |
Microsemi |
| 3126 |
K1040R |
40A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 3127 |
K1140R |
40A 1000V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 3128 |
K1615AC |
Miniature Selenium Diode, common cathode |
ITT Semiconductors |
| 3129 |
K1616AC |
Miniature Selenium Diode, doubler |
ITT Semiconductors |
| 3130 |
K1617AC |
Miniature Selenium Diode, common anode |
ITT Semiconductors |
| 3131 |
K214 |
Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage |
Knox Semiconductor Inc |
| 3132 |
K4040R |
40A 400V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 3133 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 3134 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 3135 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 3136 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 3137 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 3138 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 3139 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 3140 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 3141 |
K4F170411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 3142 |
K4F170411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 3143 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 3144 |
K4F170411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 3145 |
K4F170412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 3146 |
K4F170412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 3147 |
K4F170412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 3148 |
K4F170412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 3149 |
K4F640811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 3150 |
K4F640811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| | | |
