| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
Q62702-A918 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 3122 |
Q62702-A919 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 3123 |
Q62702-A920 |
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
Siemens |
| 3124 |
Q62702-A921 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
Siemens |
| 3125 |
Q62702-A922 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 3126 |
Q62702-A926 |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 3127 |
Q62702-D339 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 3128 |
Q62702-D978 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 3129 |
Q62702-D979 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 3130 |
Q62702-D980 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 3131 |
Q62702-F347-S1 |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 3132 |
Q62702-F500 |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 3133 |
Q62702-F704 |
Silicon Switching Diode (For high-speed switching) |
Siemens |
| 3134 |
Q62702-F739 |
Silicon Switching Diode (For high-speed switching) |
Siemens |
| 3135 |
Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 3136 |
Q62702-X104 |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 3137 |
Q62702-X105 |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 3138 |
Q62702-X116 |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 3139 |
Q62702A1173 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) |
Siemens |
| 3140 |
Q62702A1176 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) |
Siemens |
| 3141 |
Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) |
Siemens |
| 3142 |
RCA-2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
| 3143 |
RM100 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3144 |
RM100C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3145 |
RM100CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3146 |
RM100CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3147 |
RM100CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 3148 |
RM100HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3149 |
RM20 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3150 |
RM200DA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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