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Datasheets for FECT TR

Datasheets found :: 3524
Page: | 101 | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 |
No. Part Name Description Manufacturer
3121 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
3122 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
3123 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
3124 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
3125 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
3126 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
3127 Q62702-B118 Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) Siemens
3128 Q62702-B372 Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) Siemens
3129 Q62702-F182 N-Channel junction field-Effect Transistors Siemens
3130 Q62702-F205 N-Channel junction field-Effect Transistors Siemens
3131 Q62702-F209 N-Channel junction field-Effect Transistors Siemens
3132 Q62702-F219 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
3133 Q62702-F236 N-Channel junction field-Effect Transistors Siemens
3134 Q62702-F250 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
3135 Q62702-F254 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
3136 Q62702-F393 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
3137 RFH35N08 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3138 RFH35N10 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3139 RFH45N05 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3140 RFH45N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3141 RFP15N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3142 RFP15N12 N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3143 RFP5P12 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3144 RFP5P15 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
3145 ROS7N N-Channel Junction Field-Effect Transistor CCSIT-CE
3146 S2370 V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications TOSHIBA
3147 S525 N-Channel MOS-Fieldeffect Triode/ Depletion Mode Vishay
3148 S525T N-Channel MOS‐Fieldeffect Triode, Depletion Mode Vishay
3149 S525TW N-Channel MOS‐Fieldeffect Triode, Depletion Mode Vishay
3150 SD200 D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications Signetics


Datasheets found :: 3524
Page: | 101 | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 |



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