No. |
Part Name |
Description |
Manufacturer |
3121 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
3122 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
3123 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
3124 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
3125 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
3126 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
3127 |
Q62702-B118 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
3128 |
Q62702-B372 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
3129 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
3130 |
Q62702-F205 |
N-Channel junction field-Effect Transistors |
Siemens |
3131 |
Q62702-F209 |
N-Channel junction field-Effect Transistors |
Siemens |
3132 |
Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
3133 |
Q62702-F236 |
N-Channel junction field-Effect Transistors |
Siemens |
3134 |
Q62702-F250 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
3135 |
Q62702-F254 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
3136 |
Q62702-F393 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
3137 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3138 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3139 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3140 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3141 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3142 |
RFP15N12 |
N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3143 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3144 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
3145 |
ROS7N |
N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
3146 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
3147 |
S525 |
N-Channel MOS-Fieldeffect Triode/ Depletion Mode |
Vishay |
3148 |
S525T |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
3149 |
S525TW |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
3150 |
SD200 |
D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications |
Signetics |
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