| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
2SK2221 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 3122 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3123 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3124 |
2SK2394 |
N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications |
SANYO |
| 3125 |
2SK2395 |
N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications |
SANYO |
| 3126 |
2SK241 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications |
TOSHIBA |
| 3127 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 3128 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 3129 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 3130 |
2SK242 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3131 |
2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 3132 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 3133 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3134 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3135 |
2SK2539 |
N-Channel Junction Silicon FET High-Frequency Amplifier, Analog Switch Applications |
SANYO |
| 3136 |
2SK2595 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 3137 |
2SK2596 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 3138 |
2SK2795 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 3139 |
2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 3140 |
2SK2855 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 3141 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3142 |
2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 3143 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 3144 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 3145 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 3146 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 3147 |
2SK302 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 3148 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3149 |
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER |
TOSHIBA |
| 3150 |
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER |
TOSHIBA |
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