No. |
Part Name |
Description |
Manufacturer |
3121 |
M464S3254BT1 |
32MBx64 SDRAM SODIMM based on 16MBx16, 4Banks, 8KB Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
3122 |
M464S3254BT1 |
32MBx64 SDRAM SODIMM based on 16MBx16, 4Banks, 8KB Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
3123 |
M464S3254BT1 |
32MBx64 SDRAM SODIMM based on 16MBx16, 4Banks, 8KB Refresh,3.3V Synchronous DRAMs with SPD Special Presence Detect |
Samsung Electronic |
3124 |
M464S3254BT1 |
32MBx64 SDRAM SODIMM based on 16MBx16, 4Banks, 8KB Refresh,3.3V Synchronous DRAMs with SPD Special Presence Detect |
Samsung Electronic |
3125 |
M464S3254BT2 |
32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
3126 |
M464S3254BT2 |
32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
3127 |
M464S3254CTS |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
3128 |
M464S3254DTS |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
3129 |
M464S3254DTS-L1H/C1H |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
3130 |
M464S3254DTS-L1L/C1L |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
3131 |
M464S3254DTS-L7A/C7A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
3132 |
M464S3254DTS-L7C/C7C |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
3133 |
M470L1624BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx16 Data Sheet |
Samsung Electronic |
3134 |
M470L1713BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet |
Samsung Electronic |
3135 |
M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet |
Samsung Electronic |
3136 |
M48Z30-100PM1 |
Memory configuration 32Kx8 Memory type Zeropower RAM Memory size 256 K-bit 256K (32K8) ZEROPOWER?CMOS SRAM - 100ns Access Time data retention 10 Yr |
SGS Thomson Microelectronics |
3137 |
M5214 |
ONE KEY MULTI-SECTION 14 SEC VOICE |
MOSDESIGN SEMICONDUCTOR CORP |
3138 |
M5M29F25611VP |
MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
Mitsubishi Electric Corporation |
3139 |
M62376 |
8-BIT 12CH D-A CONVERTER IC BUILT-IN 12-BIT I/O EXPANDER |
Mitsubishi Electric Corporation |
3140 |
M62376GP |
8-BIT 12CH D-A CONVERTER IC BUILT-IN 12-BIT I/O EXPANDER |
Mitsubishi Electric Corporation |
3141 |
M62376GP |
8-bit 12-Ch D-A Converter IC Built-in 12-Bit I/O Expander |
Mitsubishi Electric Corporation |
3142 |
M80C186 |
CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR |
Intel |
3143 |
M84B |
PIANO / MANDOLIN 1-KEY-1-NOTE |
MOSDESIGN SEMICONDUCTOR CORP |
3144 |
MA80C186 |
CHMOS high integration 16-bit microcontroller |
Intel |
3145 |
MAX1652 |
High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP |
MAXIM - Dallas Semiconductor |
3146 |
MAX1652EEE |
High-Efficiency / PWM / Step-Down DC-DC Controllers in 16-Pin QSOP |
MAXIM - Dallas Semiconductor |
3147 |
MAX1652EEE+ |
High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP |
MAXIM - Dallas Semiconductor |
3148 |
MAX1652EEE+T |
High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP |
MAXIM - Dallas Semiconductor |
3149 |
MAX1653 |
High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP |
MAXIM - Dallas Semiconductor |
3150 |
MAX1653EEE |
High-Efficiency / PWM / Step-Down DC-DC Controllers in 16-Pin QSOP |
MAXIM - Dallas Semiconductor |
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