| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
BD9E301EFJ-LB(E2) |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 3122 |
BD9E301EFJ-LB(H2) |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 3123 |
BD9E301EFJ-LBE2 |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 3124 |
BD9E301EFJ-LBH2 |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 3125 |
BD9E302EFJ |
7.0V ～ 28V Input, 3A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 3126 |
BD9E302EFJ-E2 |
7.0V ～ 28V Input, 3A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 3127 |
BD9E303EFJ-LB(E2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 3128 |
BD9E303EFJ-LB(H2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 3129 |
BD9E303EFJ-LBE2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 3130 |
BD9E303EFJ-LBH2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 3131 |
BD9G341AEFJ |
1ch Buck Converter Integrated FET |
ROHM |
| 3132 |
BD9G341AEFJ-E2 |
1ch Buck Converter Integrated FET |
ROHM |
| 3133 |
BD9G341AEFJ-LB |
1ch Buck Converter Integrated FET |
ROHM |
| 3134 |
BD9G341AEFJ-LBE2 |
1ch Buck Converter Integrated FET |
ROHM |
| 3135 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 3136 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3137 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 3138 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 3139 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3140 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 3141 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 3142 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 3143 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 3144 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 3145 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 3146 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3147 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 3148 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 3149 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 3150 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
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