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Datasheets for P-CHANN

Datasheets found :: 6490
Page: | 101 | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 |
No. Part Name Description Manufacturer
3121 IRF9132 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs Intersil
3122 IRF9132 P-CHANNEL POWER MOSFETS Samsung Electronic
3123 IRF9132 MOSPOWER P-Channel Enhancement Mode Transistor 100V 10A Siliconix
3124 IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs Intersil
3125 IRF9133 P-CHANNEL POWER MOSFETS Samsung Electronic
3126 IRF9133 MOSPOWER P-Channel Enhancement Mode Transistor 60V 10A Siliconix
3127 IRF9140 -100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
3128 IRF9140 19A/ -100V/ 0.200 Ohm/ P-Channel Power MOSFET Intersil
3129 IRF9140 100 V, P-channel power MOSFET Samsung Electronic
3130 IRF9140 P-CHANNEL POWER MOSFET SemeLAB
3131 IRF9141 -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs Intersil
3132 IRF9141 60 V, P-channel power MOSFET Samsung Electronic
3133 IRF9142 -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs Intersil
3134 IRF9142 100 V, P-channel power MOSFET Samsung Electronic
3135 IRF9143 -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs Intersil
3136 IRF9143 60 V, P-channel power MOSFET Samsung Electronic
3137 IRF9150 25A/ -100V/ 0.150 Ohm/ P-Channel Power MOSFET Intersil
3138 IRF9151 -25A, -80V and -100V, 0.150 Ohm, P-Channel Power MOSFETs Intersil
3139 IRF9204 -40V Single P-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
3140 IRF9204PBF -40V Single P-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
3141 IRF9230 -200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
3142 IRF9230 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs Intersil
3143 IRF9230 200 V, P-channel power MOSFET Samsung Electronic
3144 IRF9230 P-CHANNEL POWER MOSFET SemeLAB
3145 IRF9230 MOSPOWER P-Channel Enhancement Mode Transistor 200V 6.5A Siliconix
3146 IRF9231 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs Intersil
3147 IRF9231 150 V, P-channel power MOSFET Samsung Electronic
3148 IRF9231 MOSPOWER P-Channel Enhancement Mode Transistor 150V 6.5A Siliconix
3149 IRF9232 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs Intersil
3150 IRF9232 200 V, P-channel power MOSFET Samsung Electronic


Datasheets found :: 6490
Page: | 101 | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 |



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