| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
2SB999 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 3122 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 3123 |
2SC101 |
High Power Switching Transistor |
TOSHIBA |
| 3124 |
2SC102 |
High Power Switching Transistor |
TOSHIBA |
| 3125 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 3126 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 3127 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 3128 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 3129 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
| 3130 |
2SC108 |
High Voltage Switching Transistor |
TOSHIBA |
| 3131 |
2SC109 |
High-Speed Switching Transistor |
TOSHIBA |
| 3132 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 3133 |
2SC13 |
High-Speed Switching Transistor |
TOSHIBA |
| 3134 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 3135 |
2SC14 |
High-Speed Switching Transistor |
TOSHIBA |
| 3136 |
2SC1433 |
Silicon NPN triple diffused MESA transistor, high voltage switching applications |
TOSHIBA |
| 3137 |
2SC1434 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
| 3138 |
2SC1435 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
| 3139 |
2SC1472 |
Transistors>Switching/Bipolar |
Renesas |
| 3140 |
2SC1515 |
Transistors>Switching/Bipolar |
Renesas |
| 3141 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 3142 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 3143 |
2SC1545 |
High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors |
ROHM |
| 3144 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 3145 |
2SC161 |
High Power Switching Transistor |
TOSHIBA |
| 3146 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 3147 |
2SC1621R |
High Speed Switching NPN silicon epitaxial transistor |
NEC |
| 3148 |
2SC1653 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 3149 |
2SC1654 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 3150 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
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