| No. |
Part Name |
Description |
Manufacturer |
| 3151 |
SD1273 |
RF transistor 13,6V 40W designed for VHF, ideally suited for marine radio applications |
SGS Thomson Microelectronics |
| 3152 |
SD1400-02 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 3153 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
| 3154 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
| 3155 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
| 3156 |
SD1429-03 |
15W 12.5V Class C NPN RF transistor designed for UHF communications |
SGS Thomson Microelectronics |
| 3157 |
SD1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 3158 |
SD1495 |
870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 3159 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
| 3160 |
SD1500 |
NPN Planar Pulsed Transistor designed for use in L BAND radar applications |
SGS Thomson Microelectronics |
| 3161 |
SD1501 |
1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 3162 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
| 3163 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
| 3164 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| 3165 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 3166 |
SD1512 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 3167 |
SD1513 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 3168 |
SD1514 |
NPN transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 3169 |
SD1520-3 |
NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
| 3170 |
SD1520-8 |
NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
| 3171 |
SD1526-01 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 3172 |
SD1526-08 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 3173 |
SD1527-08 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 3174 |
SD1527-8 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
| 3175 |
SD1528-6 |
NPN Power RF Transistor designed for IFF/DME TACAN applications |
SGS Thomson Microelectronics |
| 3176 |
SD1528-8 |
Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 3177 |
SD1530-1 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 3178 |
SD1530-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 3179 |
SD1536-03 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 3180 |
SD1536-08 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
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