No. |
Part Name |
Description |
Manufacturer |
3151 |
NDT456P |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
3152 |
NDT456P |
P-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
3153 |
NDT456P_NL |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
3154 |
NTB13N10-D |
Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement Mode D 2 PAK |
ON Semiconductor |
3155 |
NTE2378 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3156 |
NTE2382 |
MOSFET N-Channel Enhancement Mode, High Speed Switch (Compl to NTE2383) |
NTE Electronics |
3157 |
NTE2383 |
MOSFET P-Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) |
NTE Electronics |
3158 |
NTE2384 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3159 |
NTE2387 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3160 |
NTE2388 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3161 |
NTE2390 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3162 |
NTE2392 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3163 |
NTE2393 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3164 |
NTE2394 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3165 |
NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3166 |
NTE3301 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3167 |
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3168 |
NTE3303 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3169 |
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3170 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3171 |
NTE3312 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3172 |
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3173 |
NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3174 |
NTE3322 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3175 |
NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
3176 |
NTMD6N02R2-D |
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package |
ON Semiconductor |
3177 |
NTP52N10 |
N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
3178 |
NTP52N10-D |
Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
3179 |
NTP52N10G |
N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
3180 |
NTTD1P02R2-D |
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package |
ON Semiconductor |
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