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Datasheets for ELD

Datasheets found :: 9177
Page: | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 |
No. Part Name Description Manufacturer
3151 PTF10162 18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
3152 PTF10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
3153 PTF10195 125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
3154 PTF102027 40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
3155 PTF102028 18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
3156 PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon
3157 PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon
3158 PTF180601 LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
3159 PTF180601C LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
3160 PTF180601E LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
3161 PTF181301 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz Infineon
3162 PTF181301A LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz Infineon
3163 PTF191601 LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
3164 PTF191601E LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
3165 PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
3166 PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
3167 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
3168 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
3169 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
3170 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
3171 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
3172 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
3173 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
3174 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
3175 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
3176 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
3177 Q62702-F1240 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) Siemens
3178 Q62702-F1287 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) Siemens
3179 Q62702-F979 NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) Siemens
3180 RFH35N08 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor


Datasheets found :: 9177
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