No. |
Part Name |
Description |
Manufacturer |
3151 |
PTF10162 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
3152 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
3153 |
PTF10195 |
125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
3154 |
PTF102027 |
40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
3155 |
PTF102028 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
3156 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
3157 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
3158 |
PTF180601 |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
3159 |
PTF180601C |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
3160 |
PTF180601E |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
3161 |
PTF181301 |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
3162 |
PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
3163 |
PTF191601 |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
3164 |
PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
3165 |
PTF210301 |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
3166 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
3167 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
3168 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
3169 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
3170 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
3171 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
3172 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
3173 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
3174 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
3175 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
3176 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
3177 |
Q62702-F1240 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
3178 |
Q62702-F1287 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
3179 |
Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
3180 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
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