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Datasheets for ICE

Datasheets found :: 15770
Page: | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 |
No. Part Name Description Manufacturer
3151 CJF100 80.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. Complementary CJF105 Continental Device India Limited
3152 CJF101 80.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF106 Continental Device India Limited
3153 CJF102 80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. Complementary CJF107 Continental Device India Limited
3154 CJF105 80.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. Complementary CJF100 Continental Device India Limited
3155 CJF106 80.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF101 Continental Device India Limited
3156 CJF107 80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. Complementary CJF102 Continental Device India Limited
3157 CJF122 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. Continental Device India Limited
3158 CJF127 30.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. Continental Device India Limited
3159 CJF15028 36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. Continental Device India Limited
3160 CJF15029 36.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. Complementary CJF15028 Continental Device India Limited
3161 CJF15030 36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. Continental Device India Limited
3162 CJF15031 36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE. Continental Device India Limited
3163 CJF15032 50.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. Continental Device India Limited
3164 CJF15033 50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. Continental Device India Limited
3165 CJF2955 30.000W Medium Power PNP Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. Continental Device India Limited
3166 CJF3055 30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. Continental Device India Limited
3167 CJF6107 34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE. Continental Device India Limited
3168 CJF6388 40.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 100 hFE. Continental Device India Limited
3169 CJF6668 PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR Continental Device India Limited
3170 CK100 NPN Silicon Planar Transistors Continental Device India Limited
3171 CK100B 3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B Continental Device India Limited
3172 CK100S 3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 20 hFE. Continental Device India Limited
3173 CL-PS7110 Ultra-Low-Power Device for Handheld Applications Cirrus Logic
3174 CL100 0.800W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 50 - 280 hFE. Continental Device India Limited
3175 CL100A 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 - 120 hFE. Complementary CK100A Continental Device India Limited
3176 CL100B 3.000W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B Continental Device India Limited
3177 CL100S 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 20 hFE. Continental Device India Limited
3178 CL8630S X-BAND GUNN Oscillator, the device operates as a self-oscillating mixer (auto detector) Philips
3179 CL8631S X-BAND GUNN Oscillator, the device operates as a self-oscillating mixer (auto detector) Philips
3180 CL8632S X-BAND GUNN Oscillator, the device operates as a self-oscillating mixer (auto detector) Philips


Datasheets found :: 15770
Page: | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 |



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