| No. |
Part Name |
Description |
Manufacturer |
| 3151 |
2N5224 |
General Purpose NPN Silicon Low-level Switching transistor |
ITT Semiconductors |
| 3152 |
2N5224 |
NPN Transistor - Saturated Switches |
National Semiconductor |
| 3153 |
2N5225 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 3154 |
2N5226 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 3155 |
2N5228 |
PNP low level switch. |
Fairchild Semiconductor |
| 3156 |
2N5228 |
General purpose PNP silicon low-level switching transistor |
ITT Semiconductors |
| 3157 |
2N525 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 3158 |
2N526 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 3159 |
2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
| 3160 |
2N527 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 3161 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 3162 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 3163 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 3164 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 3165 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 3166 |
2N5320 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 3167 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 3168 |
2N5320 |
Professional transistor, general purpose switches |
SGS-ATES |
| 3169 |
2N5321 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 3170 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 3171 |
2N5321 |
Professional transistor, general purpose switches |
SGS-ATES |
| 3172 |
2N5322 |
SWITCHING TRANSISTORS (PNP SILICON) |
Boca Semiconductor Corporation |
| 3173 |
2N5322 |
HIGH SPEED MEDIUM VOLTAGE SWITCHES |
SemeLAB |
| 3174 |
2N5323 |
SWITCHING TRANSISTORS (PNP SILICON) |
Boca Semiconductor Corporation |
| 3175 |
2N5323 |
HIGH SPEED MEDIUM VOLTAGE SWITCHES |
SemeLAB |
| 3176 |
2N5323 |
Professional transistor, general purpose switches |
SGS-ATES |
| 3177 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 3178 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 3179 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 3180 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
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