| No. |
Part Name |
Description |
Manufacturer |
| 3151 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3152 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3153 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3154 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3155 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3156 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3157 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3158 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3159 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3160 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3161 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3162 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3163 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3164 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3165 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3166 |
3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) |
TOSHIBA |
| 3167 |
3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) |
TOSHIBA |
| 3168 |
3SK0139 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 3169 |
3SK0169 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 3170 |
3SK0192 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 3171 |
3SK101 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3172 |
3SK102 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3173 |
3SK114 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3174 |
3SK115 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3175 |
3SK121 |
GaAs N-Channel Dual gate MES type |
TOSHIBA |
| 3176 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
| 3177 |
3SK127 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
TOSHIBA |
| 3178 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 3179 |
3SK151 |
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3180 |
3SK153 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
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