| No. |
Part Name |
Description |
Manufacturer |
| 31591 |
JANTXV4N48 |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
| 31592 |
JANTXV4N48A |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
| 31593 |
JANTXV4N49 |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
| 31594 |
JANTXV4N49A |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
| 31595 |
JHC5819 |
45 V, 1 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 31596 |
JHC5822 |
40 V, 3 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 31597 |
JHC6761 |
100 V, 1 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 31598 |
JKC5819 |
45 V, 1 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 31599 |
JKC5822 |
40 V, 3 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 31600 |
JKC6761 |
100 V, 1 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 31601 |
JTDA150A |
145 W, 36 V, 960-1215 MHz common base transistor |
GHz Technology |
| 31602 |
JZ48F3000L0YBQ0 |
1.8V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31603 |
JZ48F3000L0YTQ0 |
1.8V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31604 |
JZ48F3000L0ZBQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31605 |
JZ48F3000L0ZTQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31606 |
JZ48F4000L0YBQ0 |
1.8V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31607 |
JZ48F4000L0YTQ0 |
1.8V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31608 |
JZ48F4000L0ZBQ0 |
3.0V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31609 |
JZ48F4000L0ZTQ0 |
3.0V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 31610 |
K2010A |
High reliability photocoupler, isolation 5000V, CTR=60 to 160% |
Cosmo Electronics |
| 31611 |
K2010B |
High reliability photocoupler, isolation 5000V, CTR=130 to 260% |
Cosmo Electronics |
| 31612 |
K2010C |
High reliability photocoupler, isolation 5000V, CTR=200 to 400% |
Cosmo Electronics |
| 31613 |
K2010D |
High reliability photocoupler, isolation 5000V, CTR=300 to 600% |
Cosmo Electronics |
| 31614 |
K2010E |
High reliability photocoupler, isolation 5000V, CTR=60 to 600% |
Cosmo Electronics |
| 31615 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 31616 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 31617 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 31618 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 31619 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 31620 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
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