| No. |
Part Name |
Description |
Manufacturer |
| 31651 |
S5F429PX02-LAB0 |
1/4 INCH CCD IMAGE SENSOR FOR CCIR CAMERA |
Samsung Electronic |
| 31652 |
S5F429PX03 |
1/4 INCH CCD IMAGE SENSOR FOR PAL CAMERA |
Samsung Electronic |
| 31653 |
S5F429PX03-LDB0 |
1/4 INCH CCD IMAGE SENSOR FOR PAL CAMERA |
Samsung Electronic |
| 31654 |
S5F518NZ03 |
1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERA |
Samsung Electronic |
| 31655 |
S5F518NZ03-LEB0 |
1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERA |
Samsung Electronic |
| 31656 |
S5K3A1EA |
(1/3 SXGA CMOS Image Sensor) |
Samsung Electronic |
| 31657 |
S5K3A1EA01 |
(1/3 SXGA CMOS Image Sensor) |
Samsung Electronic |
| 31658 |
S5K3A1EA02 |
(1/3 SXGA CMOS Image Sensor) |
Samsung Electronic |
| 31659 |
S5K3A1EA03 |
(1/3 SXGA CMOS Image Sensor) |
Samsung Electronic |
| 31660 |
S5K3A1EA13 |
(1/3 SXGA CMOS Image Sensor) |
Samsung Electronic |
| 31661 |
S5K433CA |
1/4" Optical Size 640x480(VGA) 3.3V/2.8V CMOS Image Sensor |
Samsung Electronic |
| 31662 |
S5K433LA |
1/4" Optical Size 640x480(VGA) 3.3V/2.8V CMOS Image Sensor |
Samsung Electronic |
| 31663 |
S5K711CA |
1/7" Optical Size 352x352(CIF) 3.3V/2.8V CMOS Image Sensor |
Samsung Electronic |
| 31664 |
S5K711LA |
1/7" Optical Size 352x352(CIF) 3.3V/2.8V CMOS Image Sensor |
Samsung Electronic |
| 31665 |
SA10 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31666 |
SA100 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31667 |
SA100 |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 31668 |
SA100A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31669 |
SA100A |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 31670 |
SA10A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31671 |
SA11 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31672 |
SA110 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31673 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 31674 |
SA110A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31675 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 31676 |
SA11A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31677 |
SA12 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31678 |
SA120 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 31679 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 31680 |
SA120A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
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