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Datasheets for TH

Datasheets found :: 135135
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No. Part Name Description Manufacturer
3181 30S1 Standard Rectifier (trr more than 500ns) Microsemi
3182 30S10 Standard Rectifier (trr more than 500ns) Microsemi
3183 30S2 Standard Rectifier (trr more than 500ns) Microsemi
3184 30S3 Standard Rectifier (trr more than 500ns) Microsemi
3185 30S4 Standard Rectifier (trr more than 500ns) Microsemi
3186 30S6 Standard Rectifier (trr more than 500ns) Microsemi
3187 30S8 Standard Rectifier (trr more than 500ns) Microsemi
3188 3102 200 V three phase bridge 2 A forward current, 3000 ns recovery time Voltage Multipliers
3189 3102F 200 V three phase bridge 2 A forward current, 150 ns recovery time Voltage Multipliers
3190 3102UF 200 V three phase bridge 2 A forward current, 70 ns recovery time Voltage Multipliers
3191 3106 600 V three phase bridge 2 A forward current, 3000 ns recovery time Voltage Multipliers
3192 3106F 600 V three phase bridge 2 A forward current, 150 ns recovery time Voltage Multipliers
3193 3106UF 600 V three phase bridge 2 A forward current, 70 ns recovery time Voltage Multipliers
3194 3110 1000 V three phase bridge 2 A forward current, 3000 ns recovery time Voltage Multipliers
3195 3110F 1000 V three phase bridge 2 A forward current, 150 ns recovery time Voltage Multipliers
3196 3110UF 1000 V three phase bridge 2 A forward current, 70 ns recovery time Voltage Multipliers
3197 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3198 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3199 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3200 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3201 3135-45 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3202 3135-7 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3203 319SPA-V6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
3204 319SPA-W6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
3205 319SPA-X6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
3206 3202 200 V - 1,000 V Three Phase Bridge Voltage Multipliers
3207 3202F 200 V - 1,000 V Three Phase Bridge Voltage Multipliers
3208 3202UF 200 V - 1,000 V Three Phase Bridge Voltage Multipliers
3209 3206 200 V - 1,000 V Three Phase Bridge Voltage Multipliers
3210 3206F 200 V - 1,000 V Three Phase Bridge Voltage Multipliers


Datasheets found :: 135135
Page: | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 | 111 |



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