No. |
Part Name |
Description |
Manufacturer |
3181 |
30S1 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3182 |
30S10 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3183 |
30S2 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3184 |
30S3 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3185 |
30S4 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3186 |
30S6 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3187 |
30S8 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3188 |
3102 |
200 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
3189 |
3102F |
200 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
3190 |
3102UF |
200 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
3191 |
3106 |
600 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
3192 |
3106F |
600 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
3193 |
3106UF |
600 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
3194 |
3110 |
1000 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
3195 |
3110F |
1000 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
3196 |
3110UF |
1000 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
3197 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
3198 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
3199 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
3200 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
3201 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
3202 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
3203 |
319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
3204 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
3205 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
3206 |
3202 |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
3207 |
3202F |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
3208 |
3202UF |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
3209 |
3206 |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
3210 |
3206F |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
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