| No. |
Part Name |
Description |
Manufacturer |
| 3181 |
BA187 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3182 |
BA188 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 3183 |
BA188 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3184 |
BA189 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 3185 |
BA189 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3186 |
BA190 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 3187 |
BA190 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3188 |
BA3890 |
Pulse width controller for portable CD players |
ROHM |
| 3189 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3190 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3191 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3192 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3193 |
BAT18-04 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3194 |
BAT18-05 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3195 |
BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 3196 |
BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop |
Infineon |
| 3197 |
BAT60A |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 3198 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3199 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3200 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3201 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3202 |
BAY44 |
Silicon general purpose diode with low reverse current |
Siemens |
| 3203 |
BAY45 |
Silicon general purpose diode with low reverse current |
Siemens |
| 3204 |
BAY46 |
Silicon general purpose diode with low reverse current |
Siemens |
| 3205 |
BAY92 |
Diffused silicon switching diode with high reverse voltage |
AEG-TELEFUNKEN |
| 3206 |
BB125 |
Variable Capacitance Diode with a large capacitance ratio |
IPRS Baneasa |
| 3207 |
BB126 |
Variable Capacitance Diode with a large capacitance ratio |
IPRS Baneasa |
| 3208 |
BB139 |
Variable Capacitance Diode with a large capacitance ratio, intended for electronictuning in VHF tuners |
IPRS Baneasa |
| 3209 |
BB831 |
Varactordiodes - Silicon variable capacitance diode with frequency range up to 2GHz |
Infineon |
| 3210 |
BB833 |
Varactordiodes - Silicon tuning diode with extended frequency range up to 2.5GHz |
Infineon |
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