No. |
Part Name |
Description |
Manufacturer |
3181 |
NM93C66EM |
Electrically Erasable Programmable Memories |
National Semiconductor |
3182 |
NM93C66EN |
Electrically Erasable Programmable Memories |
National Semiconductor |
3183 |
NM93C66M |
Electrically Erasable Programmable Memories |
National Semiconductor |
3184 |
NM93C66MM |
Electrically Erasable Programmable Memories |
National Semiconductor |
3185 |
NM93C66MN |
Electrically Erasable Programmable Memories |
National Semiconductor |
3186 |
NM93C66N |
Electrically Erasable Programmable Memories |
National Semiconductor |
3187 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3188 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3189 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3190 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3191 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3192 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3193 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
3194 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
3195 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
3196 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
3197 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
3198 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
3199 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
3200 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
3201 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
3202 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
3203 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
3204 |
NMC93C56 |
Electrically Erasable Programmable Memories |
National Semiconductor |
3205 |
NTM2222A |
NPN silicon epitaxial transistor MINI MOLD type, electrically similar to 2N2222A |
NEC |
3206 |
NTM2369 |
NPN silicon epitaxial transistor MINI MOLD type, electrically similar to 2N2369 |
NEC |
3207 |
NTM2369R |
NPN silicon epitaxial transistor MINI MOLD type, electrically similar to 2N2369 |
NEC |
3208 |
NTM2907A |
PNP silicon epitaxial transistor MINI MOLD type, electrically similar to 2N2907A |
NEC |
3209 |
NTM2907AR |
PNP silicon epitaxial transistor MINI MOLD type, electrically similar to 2N2907A |
NEC |
3210 |
NTM3904 |
NPN silicon epitaxial transistor MINI MOLD type, electrically similar to 2N3904 |
NEC |
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