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Datasheets for IELD

Datasheets found :: 19046
Page: | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 | 111 |
No. Part Name Description Manufacturer
3181 IGB15N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3182 IGB50N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3183 IGP30N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3184 IGP50N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3185 IGW30N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3186 IGW50N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3187 IGW75N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
3188 IMS-2 MIL-C-15305 Qualified, Type LT and commercial, Molded, Shielded Vishay
3189 IMS-2SWWD-30 High Q/SRF Molded, Shielded Inductors Vishay
3190 IMS-2WWD-40 High Q/SRF Molded, Shielded Inductors Vishay
3191 IMS-5 MIL-C-15305 Qualified, Type LT and commercial, Molded, Shielded Vishay
3192 IMS-5WD-40 High Q/SRF Molded, Shielded Inductors Vishay
3193 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
3194 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
3195 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
3196 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
3197 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
3198 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
3199 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
3200 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
3201 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
3202 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
3203 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
3204 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
3205 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3206 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3207 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3208 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3209 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
3210 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State


Datasheets found :: 19046
Page: | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 | 111 |



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