No. |
Part Name |
Description |
Manufacturer |
3181 |
2SC5375 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifiers Applications |
SANYO |
3182 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
3183 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
3184 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
3185 |
2SC5390 |
Silicon NPN Epitaxial High Frequency Amplifier |
Hitachi Semiconductor |
3186 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
3187 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
3188 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
3189 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
3190 |
2SC5414 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
3191 |
2SC5415 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
3192 |
2SC5419 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3193 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3194 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
3195 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3196 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
3197 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3198 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
3199 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3200 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
3201 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3202 |
2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
3203 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3204 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
3205 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
3206 |
2SC5460 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
3207 |
2SC5463 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
3208 |
2SC5464 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
3209 |
2SC5464FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
3210 |
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
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