No. |
Part Name |
Description |
Manufacturer |
3181 |
ROS525 |
npn epitaxial-planar silicon transistor for very high speed switching applications |
ICCE |
3182 |
ROS865 |
Epitaxial planar silicon NPN transistor for high speed switching applications |
ICCE |
3183 |
S6785G |
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS |
TOSHIBA |
3184 |
SA01 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
3185 |
SA02 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
3186 |
SA04 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
3187 |
SA07 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
3188 |
SBT3904U |
Switching > High Speed Switching TR |
AUK Corp |
3189 |
SC5387 |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY/ COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) |
TOSHIBA |
3190 |
SC5387S |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY/ COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) |
TOSHIBA |
3191 |
SFD118A |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
3192 |
SFD143 |
Silicon signal diode - high speed switching |
SESCOSEM |
3193 |
SFD183 |
Silicon signal diode - high speed switching |
SESCOSEM |
3194 |
SFD43 |
Silicon signal diode - high speed switching |
SESCOSEM |
3195 |
SFD83 |
Silicon signal diode - high speed switching |
SESCOSEM |
3196 |
SFT223 |
Germanium transistor, amplification and low speed switching |
COSEM |
3197 |
SFT243 |
Germanium transistor, amplification and low speed switching |
COSEM |
3198 |
SFT253 |
Germanium transistor, amplification and low speed switching |
COSEM |
3199 |
SGL60N90D |
IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance) |
Fairchild Semiconductor |
3200 |
SH0R3D42 |
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS |
TOSHIBA |
3201 |
SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
3202 |
SMBD914/MMBD914 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching |
Infineon |
3203 |
SSM3J01F |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications |
TOSHIBA |
3204 |
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
3205 |
SSM3J02F |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
3206 |
SSM3J02T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
3207 |
SSM3J05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
3208 |
SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications |
TOSHIBA |
3209 |
SSM3J13T |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications |
TOSHIBA |
3210 |
SSM3K01F |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications |
TOSHIBA |
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