| No. |
Part Name |
Description |
Manufacturer |
| 3181 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
| 3182 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 3183 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 3184 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3185 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3186 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3187 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3188 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3189 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3190 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3191 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3192 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3193 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3194 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3195 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3196 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3197 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 3198 |
1SMA10 |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3199 |
1SMA10CAT3-D |
400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional* |
ON Semiconductor |
| 3200 |
1SMA13AT3 |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3201 |
1SMA14AT3 |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3202 |
1SMA5.0AT3-D |
400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* |
ON Semiconductor |
| 3203 |
1SMA60AT3 |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3204 |
1SMA78AT3 |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3205 |
1SMAXXCAT3 |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3206 |
1SMAXXCAT3G |
400 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 3207 |
1SMB100 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 100V. 600W peak power, 3.0W steady state. |
Motorola |
| 3208 |
1SMB100A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 100V. 600W peak power, 3.0W steady state. |
Motorola |
| 3209 |
1SMB10CAT3-D |
600 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional* |
ON Semiconductor |
| 3210 |
1SMB110 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 600W peak power, 3.0W steady state. |
Motorola |
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