| No. |
Part Name |
Description |
Manufacturer |
| 3211 |
TE28F004BX-T80 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3212 |
TE28F400BVB80 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3213 |
TE28F400BVT80 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3214 |
TE28F400BX-B80 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3215 |
TE28F400BX-T80 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3216 |
TE28F400CEB120 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3217 |
TE28F400CET120 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3218 |
TE28F400CVB80 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3219 |
TE28F400CVT80 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3220 |
V53C818H |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
Mosel Vitelic Corp |
| 3221 |
V53C818H30 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
Mosel Vitelic Corp |
| 3222 |
V53C818H35 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
Mosel Vitelic Corp |
| 3223 |
V53C818H40 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
Mosel Vitelic Corp |
| 3224 |
V53C818H45 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
Mosel Vitelic Corp |
| 3225 |
V53C818H50 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
Mosel Vitelic Corp |
| 3226 |
V53C818HK30 |
30ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3227 |
V53C818HK35 |
35ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3228 |
V53C818HK40 |
40ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3229 |
V53C818HK45 |
45ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3230 |
V53C818HK50 |
50ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3231 |
V53C818HT30 |
30ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3232 |
V53C818HT35 |
35ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3233 |
V53C818HT40 |
40ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3234 |
V53C818HT45 |
45ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3235 |
V53C818HT50 |
50ns; high performance 512K x 16 EDO page mode CMOS dynamic RAM, TTL interface |
Mosel Vitelic Corp |
| 3236 |
V58C3643204SAT |
HIGH PERFORMANCE 3.3 VOLT 2M X 32 DDR SDRAM 4 X 512K X 32 |
Mosel Vitelic Corp |
| 3237 |
V62C5181024LL-70P |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 3238 |
WE128K8-150CC |
Access time:150 ns; 512K x 8 CMOS EEPROM module |
White Electronic Designs |
| 3239 |
WE128K8-150CCA |
Access time:150 ns; 512K x 8 CMOS EEPROM module |
White Electronic Designs |
| 3240 |
WE128K8-150CI |
Access time:150 ns; 512K x 8 CMOS EEPROM module |
White Electronic Designs |
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