| No. |
Part Name |
Description |
Manufacturer |
| 3211 |
T2316407A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
| 3212 |
T2316407A-10 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 3213 |
T2316407A-50 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 3214 |
T2316407A-60 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 3215 |
T2316407A-70 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 3216 |
TA8275 |
Max Power 41 W BTL x 4 ch Audio Power IC |
TOSHIBA |
| 3217 |
TA8275H |
Max Power 41 W BTL x 4 ch Audio Power IC |
TOSHIBA |
| 3218 |
TA8277 |
MAX POWER 43 W BTL x 4 CH AUDIO POWER IC |
TOSHIBA |
| 3219 |
TA8529 |
STEPPING MOTOR DRIVER IC (TA8528 + 2SA950 x 4 MCP) |
TOSHIBA |
| 3220 |
TA8529F |
STEPPING MOTOR DRIVER IC (TA8528 + 2SA950 x 4 MCP) |
TOSHIBA |
| 3221 |
TC511402AJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3222 |
TC511402AP-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3223 |
TC511402ASJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3224 |
TC511402AZ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3225 |
TC5116400BSJ |
4194304 word x 4 Bit Dynamic Ram |
TOSHIBA |
| 3226 |
TC5116400J |
4194304 word x 4 Bit Dynamic Ram |
TOSHIBA |
| 3227 |
TC514400AAZ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3228 |
TC514400AAZL-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3229 |
TC51440JL-10 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3230 |
TC51440JL-80 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3231 |
TC51440ZL-10 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3232 |
TC51440ZL-80 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 3233 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3234 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3235 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3236 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3237 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3238 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3239 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 3240 |
TC74HC670AF |
4 WORD X 4 BIT REGISTER FILE (3-STATE) |
TOSHIBA |
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