No. |
Part Name |
Description |
Manufacturer |
3211 |
KM416C1000BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
3212 |
KM416C1000BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
3213 |
KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
3214 |
KM416C1000CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
3215 |
KM416C1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
3216 |
KM416C1000CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
3217 |
KM416C1000CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
3218 |
KM416C1000CT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
3219 |
KM416C1000CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
3220 |
KM416C1000CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
3221 |
KM416C1000CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
3222 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
3223 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
3224 |
KM416C1004BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
3225 |
KM416C1004BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
3226 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
3227 |
KM416C1004BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
3228 |
KM416C1004BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
3229 |
KM416C1004BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
3230 |
KM416C1004BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
3231 |
KM416C1004BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
3232 |
KM416C1004BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
3233 |
KM416C1004BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
3234 |
KM416C1004BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
3235 |
KM416C1004BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
3236 |
KM416C1004BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
3237 |
KM416C1004BT-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
3238 |
KM416C1004C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
3239 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
3240 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
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